 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1163 DESCRIPTION *Collector Current: IC= 7A *Collector-Emitter BreakdownVoltage: V(BR)CEO= 120V(Min.) APPLICATIONS *Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IC(surge) Collector Current-Surge Total Power Dissipation @ TC=25 Junction Temperature 20 A PC 40 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1163 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 V ICBO Collector Cutoff Current VCB= 300V ; IE= 0 5 mA hFE DC Current Gain IC= 5A ; VCE= 5V 25 tf Fall Time ICP= 3.5A; IB1= 0.45A 0.5 s isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD1163
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |